PART |
Description |
Maker |
IRGP430U |
Insulated Gate Bipolar Transistors (IGBTs)(超快速绝缘栅型双极型晶体 绝缘门双极晶体管(IGBTs)(超快速绝缘栅型双极型晶体管) 500V Discrete IGBT in a TO-3P (TO-247AC) package
|
International Rectifier, Corp.
|
GT40J121 |
Discrete IGBTs Silicon N-Channel IGBT
|
Toshiba Semiconductor
|
IRGP420U GP420U |
Insulated Gate Bipolar Transistors (IGBTs)(瓒?揩???缂?????????朵?绠? 500V Discrete IGBT in a TO-3P (TO-247AC) package Insulated Gate Bipolar Transistors (IGBTs)(超快速绝缘栅型双极型晶体 绝缘门双极晶体管(IGBTs)(超快速绝缘栅型双极型晶体管)
|
International Rectifier, Corp.
|
SG35N12T SG35N12DT |
Discrete IGBTs
|
Sirectifier Semiconductors Sirectifier Global Corp.
|
SG50N06T SG50N06DT |
Discrete IGBTs
|
Sirectifier Global Corp. Sirectifier Semiconductors ETC[ETC] List of Unclassifed Manufacturers
|
SG15N12DP SG15N12P |
Discrete IGBTs
|
Sirectifier Global Corp. Sirectifier Semiconductors
|
IRGBCX0U IRGPCX0U IRGPF50U |
(IRGxxxx) Discrete IGBTs
|
International Rectifier
|
IXBT10N170 IXBH10N170 |
Discrete IGBTs High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
2SH21 |
IGBTs Silicon N-Channel IGBT
|
Hitachi Semiconductor Hitachi,Ltd.
|
ESJC30 |
Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0551-3 00; Connector Type: Wire; Contact Gender HIGH VOLTAGE SILICON DIODE
|
FUJI ELECTRIC HOLDINGS CO., LTD. FUJI[Fuji Electric]
|
2SH29 |
IGBTs Silicon N Channel IGBT High Speed Power Switching
|
Hitachi Semiconductor Hitachi,Ltd.
|